Transistors are used to switch currents from kilo-amps in power electronics to nano-amps in microelectronics at frequencies ranging from a few Hz to almost THz pushing semiconductor devices to their limits. Furthermore, new materials and device principles are introduced to boost the device performance. This requires the constant development of new simulation tools that include all the necessary effects to describe charge carrier transport in these devices. At the ITHE we develop device simulation codes based on microscopic models for power transistors as well as ultimate MOSFETs at the end of the International Technology Roadmap for Semiconductors and THz HBTs. Not only the I-V characteristics are simulated, but also the small-signal behavior, electronic noise and large-signal effects necessary to evaluate the high-frequency performance. In addition, hot-carrier effects are considered which can lead to device degradation. The sophisticated microscopic models often result in numerical problems and necessitate the development of robust numerical algorithms, which must be also CPU efficient. 

Detailed information on Simulation of Semiconductor Devices can be found on the Projectwebsite