Transistor devices based on group IV heterostructures (Si, Ge, Sn) as well as the combination of “traditional” semiconductors and 2D materials are being explored at Institute of semiconductor electronics. Amongst others, this includes heterostructure band-to-band tunneling field-effect transistors realized with ion implantation and flash lamp annealing with self-aligned hetero- and source-channel interface with respect to the gate. 2D materials are being studied to manipulate the interface properties of contact electrodes: one project investigates silicon-graphene contacts in order to realize reconfigurable transistors that are not limited by Schottky barriers. Within DFG-funded Research Training Group “InnoretVision”, metal-graphene contacts are explored to improve the contact interface to human cells. Furthermore, reconfigurable devices based on transition metal dichalcogenides are investigated based on a multi-electrode platform with nanoscale gate/contact electrodes. Institute of semiconductor electronics is part of the ForLab “2DForMe”.

Detailed information on Nanelectronic devices can be found on the Projectwebsite